STGB20NB37LZ is an N-channel clamped PowerMESH IGBT with low threshold voltage, low on-voltage drop, high current capability, and high voltage clamping feature. It is designed using the latest high voltage technology based on patented strip layout, delivering outstanding performances.
This document provides preliminary technical data for the STGB20NB37LZ, an N-channel clamped 20A D*PAK internally clamped PowerMesh IGBT. The device features a built-in collector-gate zener for precise active clamping and a gate-emitter zener for ESD protection. It is designed for high current capability and high voltage clamping, utilizing a surface-mounting D*PAK (TO-263) package.
| Collector Current (continuous) at Tj = 25 °C | 40 A |
|---|---|
| Collector Current (continuous) at Tj = 100 °C | 30 A |
| Package Type | D*PAK (TO-263) |
| Thermal Resistance Junction-case | Max 1 °C/W |
| Turn-on Delay Time | 2.3 us |
The maximum operating junction temperature is 175 °C.