STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, using the latest high voltage technology based on a patented strip layout, with outstanding performances. The STGB3NB60SD is one of the IGBTs in this family, featuring high input impedance, very low on-voltage drop, high current capability, integrated freewheeling diode, and more. It is suitable for applications such as gas discharge lamps, static relays, motor control, etc.
This document is a technical datasheet for the STGB3NB60SD, an N-channel 3A - 600V Power MESH™ IGBT manufactured by STMicroelectronics. The device features an integrated freewheeling diode and is housed in a D2PAK (TO-263) surface-mount package optimized for low-frequency applications.
| Total Dissipation at Tj = 25°C | 70 W |
|---|---|
| Package Type | D2PAK (TO-263) |
The maximum total power dissipation is 70 W at a temperature of 25°C.