STMicroelectronics manuals, page 147
ST BYV54HR handbook
BYV54HR is a 40A-200V fast recovery rectifier for aerospace applications. It features very small conduction losses, negligible switching losses, high surge current capability, high avalanche energy capability, and a hermetic package.
ST STRH100N10 handbook
The STRH100N10 is a 100 V, 48 A N-channel power MOSFET from STMicroelectronics. This MOSFET features fast switching, 100% avalanche tested, hermetic package, 70 krad TID, SEE radiation hardened, and is fully ESCC qualified.
ST STPS1045HR handbook
STPS1045HR is ST's aerospace 2 x 10 A - 45 V Schottky rectifier with low voltage drop, low loss, low capacitance and high reverse avalanche surge capability.
ST 2N2484HR handbook
The 2N2484HR is a silicon planar epitaxial NPN transistor specifically designed for aerospace Hi-Rel applications and housed in hermetic packages. It complies with the ESCC 5000 qualification standard. It is ESCC qualified according to the 5201-001 specification.
ST BYW81HR handbook
BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier is a high surge current capability, high avalanche energy capability, hermetic packages, and ESCC qualified rectifier.
ST 54AC164245 handbook
This is information on a product in full production. The product is a 16-bit transceiver that supports bidirectional level shifting with a voltage range from 3.3V to 5V. It features a separated enable pin and Schmidt-triggered I/Os. Designed for interface between a 5V bus and a 3.3V bus, it achieves high-speed operation and low-power dissipation.
ST STPS6045HR handbook
STPS6045HR is a 2x30A-45V Schottky rectifier from ST company. It features low voltage drop, low switching losses, low capacitance, high reverse avalanche surge capability, high temperature tolerance, etc. It is suitable for medium voltage applications and high frequency circuits.
ST STRH40N6 handbook
STRH40N6 Rad-Hard P-channel 60 V, 30 A Power MOSFET Datasheet, this product has features of fast switching, 100% avalanche tested, hermetic package, 70 krad TID, SEE radiation hardened, satellite, high reliability
ST STRH100N6 handbook
ST STRH40P10 handbook
This document describes the features and characteristics of the Rad-Hard P-channel 100 V, 34 A Power MOSFET developed by STMicroelectronics.
ST ST1843 ST1845 handbook
The ST1843 and ST1845 are rad-tolerant current mode PWM controllers providing an industry standard solution for the implementation of provides the off-line or DC to DC fixed frequency current mode control schemes with a minimal external parts count. Its radiation hardness and hermetic packaging makes it an ideal choice for aerospace and other harsh environments.
ST STRH8N10 handbook
This document describes the STMicroelectronics STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET, which features fast switching, 100% avalanche tested, hermetic package, 70 krad TID, and SEE radiation hardened.
ST 2ST3360 handbook
The 2ST3360 is a fast dual complementary device (NPN and PNP) housed in a single LCC-6 hermetic Hi-Rel package, specifically designed for aerospace Hi- Rel applications. Its radiation hardness allows key parameters such as gain and leakage current to stay at best-in-class post irradiation levels. ST proprietary technology also results in a high degree of electrical performance for both transistors in the pair. The high switching performance of each make this device particularly suitable for power MOSFET driver applications.
ST M24C16 M24C08 M24C04 M24C02 M24C01 16Kbit 8Kbit 4Kbit 2Kbit 1Kbit Serial I C bus EEPROM handbook
This document describes the features and characteristics of the M24C16, M24C08, M24C04, M24C02, and M24C01 serial EEPROM chips that support the I²C bus. These chips have a two-wire I²C serial interface, support a 400kHz protocol, operate at a single supply voltage of 2.5V to 5.5V or 1.8V to 5.5V, and have features such as write control input, byte and page write (up to 16 bytes), random and sequential read modes, self-timed programming cycle, automatic address incrementing, enhanced ESD/latch-up protection, over 1 million write cycles, and over 40-year data retention.
ST STGY50NB60HD N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT handbook
STGY50NB60HD is an N-channel IGBT with features such as high input impedance, low on-voltage drop, low gate charge, high current capability, and very high frequency operation.