STGB20NB32LZ is an N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT produced by ST. It uses the latest high voltage technology, has outstanding performance, and integrates an emitter-gate zener diode and a collector-gate zener diode, respectively providing ESD protection and high-precision active clamping.
This document describes the STGB20NB32LZ and STGB20NB32LZ-1, which are N-Channel Clamped 20A IGBTs featuring STMicroelectronics' PowerMESH technology. These devices are designed with an internal collector-gate zener for precise active clamping and a gate-emitter zener for ESD protection, making them suitable for automotive ignition and ABS applications.
| Collector Current (continuous) at Tj = 25°C | 40 A |
|---|---|
| Collector Current (continuous) at Tj = 100°C | 30 A |
| Collector Current (pulsed) | 80 A |
| Total Dissipation at Tc = 25°C | 150 W |
| ESD (Human Body Model) | 4 KV |
| Storage Temperature | -65 to 175 °C |
| Thermal Resistance Junction-ambient | Max 62.5 °C/W |
The device is designed for automotive ignition and ABS applications.
The maximum operating junction temperature is 175 °C.