STMicroelectronics STGB3NB60HD PowerMESH IGBT Datasheet

The STGB3NB60HD is a N-channel 3A-600V TO-263 power module produced by ST company. It has high input impedance, low on-voltage drop, low gate charge, high current capability, high frequency operation, and open-circuit losses include tail current.


STMicroelectronics STGB3NB60HD PowerMESH IGBT Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
92 KB
Published
08 August, 2012
Updated
30 September, 2023
MD5 checksum
34D7158D54F4E847E4F589A8DE69E78C

About this manual

This document is a technical datasheet for the STGB3NB60HD, an N-channel 3A - 600V PowerMESH™ IGBT manufactured by STMicroelectronics. The device features a surface-mounting D2PAK (TO-263) package and includes a co-packaged antiparallel diode with the TurboSwitch™ technology.

The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings for collector-emitter voltage and continuous current. It details thermal data such as junction-to-case resistance and outlines dynamic parameters like switching times and gate charges. The document also includes graphical representations of output characteristics, transfer curves, and safe operating areas.

What's inside

  • Description
  • Applications
  • Absolute Maximum Ratings
  • Thermal Data
  • Electrical Characteristics
  • Switching Losses
  • Collector-Emitter Diode
  • Mechanical Data

Specifications

Package TypeTO-263 (D2PAK)
Total Dissipation @ 25°C70 W
Operating Junction Temperature Max150 °C

Frequently asked questions

What are the applications for this IGBT?

It is designed for high frequency motor controls and SMPS and PFC in both hard switch and resonant topologies.

Is this device co-packaged with a diode?

Yes, it is co-packaged with TurboSwitch™ and an antiparallel diode.

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