STGB10N60L is a N-channel IGBT produced by STMicroelectronics. It has a maximum rated voltage of 600 V and a maximum current of 10 A. It is packaged in D2PAK (TO-263) and has the characteristics of high input impedance (voltage driven), very low on-voltage drop (Vcesat), low threshold voltage (logic level input), high current capability, and switching losses including tail current.
This document is a technical datasheet for the STGB10N60L, an N-Channel 10A - 600V D2PAK Logic Level IGBT manufactured by STMicroelectronics. The device is designed for applications requiring high input impedance and a very low on-voltage drop, making it suitable for electronic ignition, light dimmers, and static relays. It is available in a surface-mounting D2PAK (TO-263) power package.
| Collector Current (continuous) at Tc = 25 °C | 25 A |
|---|---|
| Collector Current (continuous) at Tc = 100 °C | 20 A |
| Total Dissipation at Tc = 25 °C | 125 W |
| Thermal Resistance Junction-case | Max 1.2 °C/W |
| Gate Threshold Voltage (Typical) | 1.0 V |
| Package Type | D2PAK (TO-263) |
The device is suitable for electronic ignition, light dimmer, and static relay applications.
The maximum operating junction temperature is 175 °C.
The derating factor is 0.83 W/°C.