STGB10NB37LZ is a N-channel bipolar transistor launched by SGS-Thomson. It has low threshold voltage, low turn-on voltage drop, high current capacity, high voltage clamping feature, etc. It is used in automotive ignition and other fields.
This document provides technical specifications for the STGB10NB37LZ, an N-channel clamped 20A internally clamped PowerMesh™ IGBT. The device features a low threshold voltage and low on-voltage drop, designed for applications such as automotive ignition and ABS systems. It includes built-in collector-gate and gate-emitter zeners for precise active clamping and ESD protection.
| Collector Current (continuous) | 20 A |
|---|---|
| Collector Current (pulse) | 60 A |
| Total Dissipation | 125 W |
| Thermal Resistance Junction-case | 1.2 °C/W |
| Thermal Resistance Junction-ambient | 62.5 °C/W |
| Gate Threshold Voltage | 0.6 V to 2.4 V |
| Collector-Emitter Saturation Voltage | 1.2 V to 1.8 V |
The device is designed for applications such as automotive ignition and ABS systems.
The maximum operating junction temperature is 175 °C.
The ESD rating is 4 KV.