STMicroelectronics STGB18N40LZ/STGD18N40LZ IGBT Datasheet

About this manual

This document provides technical specifications for the STGB18N40LZ (DPAK package) and STGD18N40LZ (IPAK/D2PAK packages) internally clamped IGBTs. Key features include 180 mJ of avalanche energy at Tc = 150 °C, ESD gate-emitter protection, and high pulsed current capability suitable for applications like pencil coil electronic ignition drivers.

The datasheet details absolute maximum ratings such as a collector-emitter voltage of 400 V and continuous collector currents up to 30 A. It also includes static and dynamic electrical characteristics, thermal resistance values for various packages, and typical application circuit diagrams.

What's inside

• Electrical ratings
• Static electrical characteristics
• Dynamic electrical characteristics
• Switching on/off times
• Thermal impedance
• Package mechanical data

Specifications

Frequently asked questions

What is the maximum continuous collector current for this IGBT at a junction temperature of 100 °C?

The device supports a continuous collector current of up to 25 A in DPAK packages or 30 A in IPAK packages when the junction temperature is 100 °C.

What single pulse energy rating does this IGBT have when the case temperature is 150 °C?

The device can handle a single pulse energy of 180 mJ at a case temperature of 150 °C with an inductance of 3 mH.