STGB20NB41LZ is an N-channel clamped PowerMESH IGBT with low threshold voltage, low on-voltage drop, low gate charge, high current capability, and high voltage clamping feature. It utilizes the latest high voltage technology based on a patented strip layout, providing outstanding performances.
This document describes the STGB20NB41LZ, an N-channel clamped 20A internally clamped PowerMESH™ IGBT manufactured by STMicroelectronics. The device features low threshold voltage and high current capability, designed for applications such as automotive ignition systems.
The datasheet provides absolute maximum ratings, electrical characteristics including switching times and capacitance values, functional test data, and mechanical dimensions for the D²PAK package.
| Collector-Emitter Voltage (Clamped) | 20 V |
|---|---|
| Collector Current (continuous) at Tc = 25°C | 40 A |
| Package Type | D²PAK |
The STGB20NB41LZ is designed for automotive ignition applications.
Yes, the gate-emitter zener supplies ESD protection.