STGP3NB60MD - STGB3NB60MD is a N-CHANNEL 3A - 600V TO-220 / D2PAK PowerMESH™ IGBT produced by STMicroelectronics. It has high input impedance, low on-voltage drop, low off losses include tail current, low gate charge, high current capability, high frequency operation and so on.
This document describes the STMicroelectronics STGP3NB60MD (TO-220 package) and STGB3NB60MD (D?PAK package) N-channel IGBTs. These devices utilize PowerMESH™ technology optimized for high-frequency applications below 20kHz, featuring an integrated antiparallel diode and TurboSwitch™ capability.
| Collector-Emitter Voltage (Vces) | 600 V |
|---|---|
| Gate-Emitter Voltage (Max) | +20 V |
| Collector Current (Continuous) @ 25°C | 6 A |
| Collector Current (Continuous) @ 100°C | 3 A |
| Total Dissipation @ 25°C | 68 W |
| Operating Junction Temperature (Max) | 150 °C |
| Collector-Emitter Saturation Voltage @ 3A/15V | < 1.9 V |
They are designed for motor controls and SMPS/PFC circuits, supporting both hard switching and resonant topologies.
The maximum operating junction temperature (Tj) is 150 °C.