STGB10NB37LZ is a N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh IGBT produced by STMicroelectronics. It uses the latest high voltage technology, and has the characteristics of low threshold voltage, low turn-on voltage drop, low gate charge, high current capability and high voltage clamping.
This document describes the STGB10NB37LZ, an N-Channel Clamped 20A IGBT manufactured by STMicroelectronics in a D2PAK package. The device utilizes PowerMesh™ technology and includes built-in collector-gate and gate-emitter zeners for precise active clamping and ESD protection. It is designed for applications such as automotive ignition and ABS systems.
| Collector Current (continuous) | 20 A |
|---|---|
| Collector-Emitter Voltage | CLAMPED |
| Thermal Resistance Junction-case | Max 1.2 °C/W |
| Clamped Voltage | 375 V |
| Package Type | D2PAK |
The device is designed for applications such as automotive ignition and ABS systems.
The maximum operating junction temperature is 175 °C.
Yes, it features a built-in collector-gate zener for active clamping and a gate-emitter zener for ESD protection.