STGP3NB60MD - STGB3NB60MD is a N-CHANNEL 3A - 600V TO-220 / D2PAK PowerMESH™ IGBT produced by STMicroelectronics. It has high input impedance, low on-voltage drop, low off losses include tail current, low gate charge, high current capability, high frequency operation and so on.
STGP3NB60K is a N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH™ IGBT from STMicroelectronics, which has high input impedance, low on-voltage drop, low gate charge, high current capability, off losses include tail current, high frequency operation and short circuit rating.
The STGB3NB60HD is a N-channel 3A-600V TO-263 power module produced by ST company. It has high input impedance, low on-voltage drop, low gate charge, high current capability, high frequency operation, and open-circuit losses include tail current.
STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD is a high-performance IGBT produced by STMicroelectronics. This device has high input impedance, low on-voltage drop, low gate charge, high current capability, low off-loss, high frequency operation, etc. It is mainly used in motor control and SMPS and PFC circuits.
STGB20NB41LZ is an N-channel clamped PowerMESH IGBT with low threshold voltage, low on-voltage drop, low gate charge, high current capability, and high voltage clamping feature. It utilizes the latest high voltage technology based on a patented strip layout, providing outstanding performances.
STGB20NB37LZ is an N-channel clamped PowerMESH IGBT with low threshold voltage, low on-voltage drop, high current capability, and high voltage clamping feature. It is designed using the latest high voltage technology based on patented strip layout, delivering outstanding performances.
STGB20NB32LZ is an N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT produced by ST. It uses the latest high voltage technology, has outstanding performance, and integrates an emitter-gate zener diode and a collector-gate zener diode, respectively providing ESD protection and high-precision active clamping.
This document is the specification of STGD18N40LZ - STGB18N40LZ, which introduces the features and characteristics of the product, including rated voltage, electrical characteristics, test circuits, and package dimensions
STMicroelectronics N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH™ IGBTs with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short cir- cuit withstand capability.
The STGB10NB40LZ N-CHANNEL CLAMPED 20A - D²PAK INTERNALLY CLAMPED PowerMESH™ IGBT is an advanced family of IGBTs with outstanding performances, designed by STMicroelectronics.
STGB10NB37LZ is a N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh IGBT produced by STMicroelectronics. It uses the latest high voltage technology, and has the characteristics of low threshold voltage, low turn-on voltage drop, low gate charge, high current capability and high voltage clamping.
STGB10NB37LZ is a N-channel bipolar transistor launched by SGS-Thomson. It has low threshold voltage, low turn-on voltage drop, high current capacity, high voltage clamping feature, etc. It is used in automotive ignition and other fields.
STGB10N60L is a N-channel IGBT produced by STMicroelectronics. It has a maximum rated voltage of 600 V and a maximum current of 10 A. It is packaged in D2PAK (TO-263) and has the characteristics of high input impedance (voltage driven), very low on-voltage drop (Vcesat), low threshold voltage (logic level input), high current capability, and switching losses including tail current.
STG719 is a low power single supply SPDT CMOS switch from STMicroelectronics. It is designed to operate from 1.8V to 5.5V, making this device ideal for portable applications. It offers 4Ω ON-Resistance Max at 5V 25oC. Additional key features are fast switching speed (tON=7ns, tOFF=4.5ns) and Low Power Consumption (<0.01µW Typ.).
