STMicroelectronics Manuals - Page 151

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STMicroelectronics manuals, page 151

  • ST STGD6NC60HD handbook

    stgd6nc60hd is a 6a - 600v n-channel igbt produced by stmicroelectronics. it has the characteristics of low voltage drop, low on-state losses, low recovery energy, high frequency operation, etc.

  • ST STGD5NB120SZ-1 STGD5NB120SZ handbook

    This document describes the features and characteristics of the STMicroelectronics STGD5NB120SZ-1 STGD5NB120SZ N-CHANNEL 5A - 1200V DPAK/IPAK internally clamped PowerMESH™ IGBT, released on January 13, 2005. These include high input impedance, low on-voltage drop (Vcesat), high current capability, off losses including tail current, and high voltage clamping features.

  • ST STGD3NB60S handbook

    This document describes the features and characteristics of the STGD3NB60S N-CHANNEL 3A - 600V DPAK Power MESH IGBT, including high input impedance, very low on-voltage drop (Vcesat), high current capability, and surface-mounting DPAK (TO-252) power package.

  • ST STGD3NB60SD handbook

    STGD3NB60SD is a high voltage IGBT produced by STMicroelectronics. Its rated voltage is 600 V and its rated current is 3 A. It is packaged in a DPAK package.

  • ST STGP3NB60S STGD3NB60S handbook

  • ST STGP3NB60M - STGD3NB60M handbook

    STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances using the latest high voltage technology based on a patented strip layout. These IGBTs have very low switching times and are suitable for high frequency applications (<20KHZ). The document describes the features and characteristics of the STGP3NB60M and STGD3NB60M models.

  • ST STGD3NB60KD handbook

    STGD3NB60KD is a high power IGBT designed by STMicroelectronics, with a maximum voltage of 600V and a maximum current of 3A. The rated working temperature is -65 to 150°C.

  • ST STGD3NB60H handbook

    STGD3NB60H is a high-performance N-channel IGBT launched by STMicroelectronics, with high input impedance, low on-voltage drop, low gate charge, high current capability, very high frequency operation, tail current and other characteristics.

  • ST STGP7NC60HD STGF7NC60HD - STGB7NC60HD handbook

    STMicroelectronics STGP7NC60HD STGF7NC60HD - STGB7NC60HD N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK Very Fast PowerMESH™ IGBT is an IGBT launched by STMicroelectronics. It features low voltage drop, low switching loss, low recovery energy, high frequency and fast recovery. It is suitable for high frequency inverters, SMPS and PFC applications.

  • ST STGP7NB60K-STGP7NB60KFP-STGD7NB60K STGP7NB60KD-STGP7NB60KDFP-STGB7NB60KD handbook

    STGP7NB60K-STGP7NB60KFP-STGD7NB60K STGP7NB60KD-STGP7NB60KDFP-STGB7NB60KD is a N-channel 7A-600V-TO-220/FP/DPAK/D2PAK PowerMESH™ IGBT produced by STMicroelectronics, with outstanding performances such as high input impedance (voltage driven), low on-voltage drop (Vcesat), low gate charge, high current capability, off losses include tail current, frequency operation, short circuit rated, etc., and is applied to high frequency motor control, SMPS and PFC applications.

  • ST STGB7NB60HD handbook

    The STGB7NB60HD N-CHANNEL 7A - 600V DPAK PowerMESH IGBT is a high-performance power IGBT device from STMicroelectronics. It features high input impedance, low on-voltage drop, low gate charge, high current capability, very high frequency operation and low off-losses, making it suitable for high frequency motor controls, SMPS and PFC applications.

  • ST STGP7NB60FD - STGB7NB60FD handbook

    This document describes the features and performance of the PowerMESH™ IGBT series products produced by STMicroelectronics. These products have high input impedance, low on-voltage drop (Vcesat), off losses including tail current, low gate charge, high current capability, and high frequency operation. They are suitable for motor controls, SMPS and PFC, and both hard switch and resonant topologies.

  • ST STGB7NB40LZ handbook

    STGB7NB40LZ is a high voltage insulated gate bipolar transistor (IGBT) designed by STMicroelectronics. It features low threshold voltage, low on-voltage drop, low gate charge, high current capability and high voltage clamping. The device is suitable for automotive ignition applications.

  • ST STGB6NC60HD - STGB6NC60HD-1 STGF6NC60HD - STGP6NC60HD handbook(1)

    STGB6NC60HD, STGB6NC60HD-1, STGF6NC60HD, STGP6NC60HD are a family of N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH™ IGBTs designed by STMicroelectronics. This product has the features of low voltage drop (Vcesat), low CRES / CIES ratio (no cross-conduction susceptibility), very soft ultra fast recovery antiparallel diode and high frequency operation.

  • ST STGB6NC60HD - STGB6NC60HD-1 STGF6NC60HD - STGP6NC60HD handbook

    STGP6NC60HD and STGF6NC60HD are a new generation of N-channel 6A-600V TO-220/TO-220FP PowerMESH™ IGBTs with outstanding performances, including lower on-voltage drop, lower off losses, lower CRES/CIES ratio, high frequency operation and very soft ultra fast recovery anti parallel diode. They are suitable for high frequency inverters, SMPS and PFC applications.