This document describes the features and characteristics of the EMX18 / UMX18N dual transistors, including two 2SC5585 chips in EMT or UMT packages, mounting possible with EMT3 or UMT3 automatic mounting machines, independent transistor elements to eliminate interference, and reduced mounting cost and area.
EM6K6 is a Nch+Nch MOSFET with 1/3 1.8V drive. It features independent MOSFET elements, low on-resistance, and low voltage drive, making it suitable for switching applications and portable equipment.
The EM6K34 is a high-performance Nch + Nch MOSFET produced by ROHM, with high-speed switching, small package, and low drive voltage, used in switch power supplies and other fields.
This document describes the features and characteristics of the EM6K33 product from ROHM Co. Ltd., including high-speed switching, small package size, and ultra-low voltage drive.
EM6M2 is a low voltage drive Nch+Pch MOSFET produced by ROHM. It has the characteristics of high switching speed, low driving voltage, and built-in G-S protection diode. It can be applied to switching circuits.
The ES6U3 is a 4V drive Nch+SBD MOSFET from ROHM, which features high switching speed, low on-resistance, and a built-in low VF Schottky barrier diode. It can be used in internal circuit switching applications.
ES6U2 1.5V Drive Nch+SBD MOSFET is a device that integrates Nch MOSFET and Schottky diode. It has the characteristics of high switching speed, low on-resistance, low driving voltage, etc., and is suitable for internal circuit switching applications.
This document introduces the structure, features, applications, and packaging specifications of ROHM's 1.5V Drive Pch + Pch MOSFET TT8J13. It is a silicon P-channel MOSFET with low on-resistance, small high power package, and low voltage drive capabilities.
