RMW200N03 is a high-voltage N-channel MOSFET produced by ROHM Company. Its features are high power package, high switching speed and low on-resistance, which is suitable for switching applications.
1.5V Drive Pch MOSFET RQ1A070ZP is a silicon P-channel MOSFET with low on-resistance, low voltage drive (1.5 V), and high power package. It is suitable for switching applications.
RQ1E050RP is a P-channel MOSFET produced by ROHM. The maximum operating voltage is 4V, the on-resistance is low, and it is suitable for switching circuits.
The RQ1E070RP is an N-channel power MOSFET with a maximum rated voltage of -30V and a maximum continuous drain current of -7A. It features low on-resistance, built-in G-S protection diode, small surface mount package (TSMT8) and lead-free lead plating, RoHS compliant.
This document introduces the structure, dimensions, features, and applications of ROHM's RQ1E075XN 4V Drive Nch MOSFET. It features low on-resistance, built-in G-S protection diode, and small surface mount package (TSMT8).
This document describes the features and characteristics of the RQ1E100XN Nch 30V 10A Power MOSFET product from ROHM, including low on-resistance, built-in G-S protection diode, and small surface mount package.
RRH040P03 Pch -30V -4A Power MOSFET is a low-resistance power MOSFET produced by ROHM. It has a rated voltage of -30V, a maximum current of 4A, and a maximum power consumption of 2.0W.
The RRH050P03 Pch -30V -5A Power MOSFET is a power MOSFET produced by ROHM. It has low on-resistance, built-in G-S Protection Diode, small package and other features.
This document introduces the RRH075P03 Pch -30V -7.5A Power MOSFET, which features low on-resistance, built-in G-S protection diode, and small surface mount package.
This document is a datasheet from ROHM Co., Ltd. It describes the features and characteristics of the RRH090P03 Pch -30V -9A Power MOSFET. The product features low on-resistance, built-in G-S Protection Diode, and small surface mount package.
