US6M1 Transistors Rev.B is a silicon N-channel / P-channel MOSFET with low on-resistance, built-in G-S protection diode, and small surface mount package (TUMT6). It is suitable for power switching and DC/DC converter applications.
This document describes the features and characteristics of ROHM's 1.5V Drive Nch+Pch MOSFET, including low on-resistance, low voltage drive, and built-in G-S protection diode. It is suitable for applications such as internal circuit switching.
US6K4 is a 1.8V drive Nch+Nch MOSFET produced by Toshiba, which has the characteristics of high-speed switching, low on-resistance and is suitable for switching applications.
This document describes the features and characteristics of ROHM's UM6K33N MOSFET product, including high-speed switching, small package, and ultra-low voltage drive.
This document describes the features and characteristics of the 4V Drive Pch MOSFET UM6J1N from ROHM Co., Ltd., including the independence of the two RSU002P03 transistors in a single UMT package and the reduction in mounting cost and area.
This document describes the features and characteristics of the US6X6 Transistors Rev.B 1/2 low frequency amplifier, including large collector current and a maximum saturation voltage of 350mV.
The document is about the US6T7 transistor. The US6T7 is a low-frequency amplifier suitable for driving low-frequency amplifiers. Its features include a large collector current and a maximum VCE(sat) of -370mV at IC = -1A / IB = -50mA.
