This document describes the features and characteristics of ROHM RSJ550N10 4V Drive Nch MOSFET, including low on-resistance, high power package, and 4V drive.
RSJ450N04 is a N-channel MOSFET produced by ROHM. It is mainly used for switching applications. The device has low on-resistance, high current and high power.
This document is a datasheet for the RSJ300N10 4V Drive Nch MOSFET produced by ROHM Co., Ltd. The product features low on-resistance and a built-in G-S protection diode, making it suitable for switching applications.
This is a datasheet of 4V Drive Pch MOSFET RSH070P05. It has the following features: 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). Applications include power switching, DC/DC converter, inverter, etc.
RSH070N05 4V Drive Nch MOSFET datasheet provides information such as structure, dimensions, packaging, features, applications, maximum ratings and thermal resistance.
This document describes the features and characteristics of the RSH065N06 4V Drive Nch MOSFET produced by ROHM, including low on-resistance, built-in G-S protection diode, and small surface mount package. This product is suitable for switching applications.
RSE002P03 is a low-voltage power MOSFET manufactured by Toshiba Corporation. It has a low on-resistance and a small package, making it suitable for use in switching power supplies.
This document describes the features and characteristics of the RSE002N06 2.5V Drive Nch MOSFET produced by ROHM Co., Ltd., including high-speed switching, small package, and low voltage drive.
The RSD200N05 is a N-channel MOSFET from ROHM Corporation. It features low on-resistance, high switching speed and simple drive circuits. The device has a maximum voltage rating of 45V, a maximum current rating of 20A, and a maximum power dissipation of 20W.
