ROHM Manuals

EMF32 / UMF32N is a dual transistor power management circuit suitable for power management circuits. It features a power switching circuit in a single package, reducing mounting cost and area. The product employs a silicon epitaxial planar transistor structure.

This document describes the features and characteristics of ROHM EMG9 / UMG9N / FMG9A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors).

DTD123TK is a NPN type digital transistor produced by ROHM, with a rated current of 500mA and a rated voltage of 40V. It has built-in bias resistors and does not require external resistors to realize an inverter circuit. It is suitable for switching circuits, inverter circuits, interface circuits and driver circuits.

DTDG23YP is a NPN digital transistor with built-in diodes and resistors, high integration, high current gain, low turn-on voltage, short-circuit protection, etc.

This document is the technical manual for DTD743ZE / DTD743ZM Transistors, which introduces the product's features and characteristics, including applications, appearance dimensions, function features, structure, absolute maximum ratings, packaging specifications, electrical characteristics, etc.

DTD743XE / DTD743XM is a low voltage integrated switch transistor launched by ROHM. The product has the characteristics of low Vce (sat), built-in bias resistor, etc., and is suitable for switch power supply, driver circuit, interface circuit and other scenarios.

DTD723YE / DTD723YM is a NPN type digital transistor produced by ROHM company, which has the characteristics of low voltage drop and built-in bias resistors.

This document is the datasheet of DTD713ZE/DTD713ZM diodes, which has a low VCE (sat) and built-in bias resistors, which can be configured as a switch circuit without connecting external input resistors.

This document describes the features and characteristics of DTD543ZE / DTD543ZM transistors, including low VCE (sat), built-in resistors, and easy device design. These transistors are suitable for applications such as inverters, interfaces, and drivers.

This document describes the features and characteristics of DTD543XE / DTD543XM digital transistors, including low VCE (sat) and built-in resistors. It also provides information on applications and dimensions.

The DTD543EE / DTD543EM from ROHM are low VCE (sat) digital transistors with built-in resistors. They have lower VCE (sat) and built-in bias resistors, allowing the configuration of an inverter circuit without connecting external input resistors. The bias resistors consist of thin-film resistors with complete isolation, enabling negative biasing of the input and almost completely eliminating parasitic effects. Only the on/off conditions need to be set for operation, making device design easy.

This document describes the features and characteristics of ROHM's DTD523YE / DTD523YM 500mA / 12V low VCE (sat) digital transistors (with built-in resistors), including lower VCE (sat), built-in bias resistors, structure, and packaging specifications.

This document describes the features and characteristics of the DTD513ZE / DTD513ZM digital transistors produced by ROHM, including lower VCE (sat), built-in bias resistors, easy device design and operation.

DTD143EK is a NPN digital transistor with built-in bias resistors. It does not require external input resistors and can be configured as an inverter circuit. It has the advantages of small size, low power consumption, and excellent performance.