ROHM Manuals

EMT1 / UMT1N / IMT1A Transistors are epitaxial planar type PNP silicon transistors with excellent stability and reliability.

This document describes the features and dimensions of the general purpose dual transistor products EMT18 / UMT18N / IMT18 produced by ROHM. The product has two 2SA2018 chips and can be mounted using EMT3, UMT3 or SMT3 automatic mounting machines. The transistor elements are independent, eliminating interference. The product has an epitaxial planar type PNP silicon transistor structure.

IMT17 is a general purpose dual transistor used for general small signal amplification. It features independent transistor elements, eliminating interference, and has high collector current. The product has the same external dimensions as the SMT3 package, so the same mounting machine can be used. Installation cost and area are reduced by half.

EMB6 / UMB6N is a PNP complex digital transistor produced by ROHM company. Its maximum output current is -100mA and its maximum supply voltage is -50V. The transistor has built-in bias resistors, which do not require external input resistors to form an inverter circuit. In addition, the transistor also has a completely isolated thin-film resistor that can achieve negative bias input and completely eliminate parasitic effects.

EMG4 / UMG4N / FMG4A is a NPN 100mA 50V complex digital transistor produced by ROHM, which has built-in bias resistors and completely isolated thin film resistors. It can be used in switch circuits, interface circuits and driver circuits.

EMA3 / UMA3N / FMA3A are ROHM's integrated digital transistors with built-in bias resistors, with a maximum collector-emitter reverse voltage of -50V and a maximum collector current of -100mA.

EMG2 / UMG2N / FMG2A is an NPN 100mA 50V complex digital transistor produced by ROHM Co., Ltd. It features built-in bias resistors and is suitable for inverter circuits, interface circuits, and driver circuits.

The document describes the features and characteristics of EMG1 / UMG1N / FMG1A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors).

UMA9N / FMA9A is a PNP-100mA-50V complex digital transistor (bias resistor built-in transistor) produced by ROHM. It has the following features: built-in bias resistor R1 = R2 = 10kW, two DTA114E chips in one package, emitter (GND) common type, inverter circuit can be configured without connecting external input resistors (see internal circuit), bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, completely eliminating parasitic effects, only on/off conditions need to be set for operation, making circuit design easy, lead free/RoHS compliant.

EMA5/UMA5N/FMA5A is a dual-transistor complex digital transistor launched by ROHM. It features built-in bias resistors, which do not require external input resistors to form an inverter circuit. It has the advantages of large drive current, wide operating voltage range, and completely isolated bias resistors.

EMA2 / UMA2N / FMA2A are three complex digital transistors produced by ROHM, which use built-in bias resistors and do not need to connect external input resistors to form an inverter circuit.

UMA1N / FMA1A are complex digital transistors (with built-in resistors) suitable for inverter, interface, driver applications. They feature two DTA124E chips, which can reduce mounting cost and area. The structure is PNP epitaxial planar silicon transistor (dual chips; each with two built-in resistors).

FMY4A is a dual transistor from ROHM, which contains 2SA1037AK and 2SC2412K chips.

This document is the electronic component manual of EML17 product, which introduces the product features, structure, external dimensions, package, application scenarios, absolute maximum ratings, electrical characteristics, etc.