R5016ANX is a N-channel MOSFET launched by Toshiba. It is mainly used in switching power supplies. This product has the characteristics of low on-resistance, fast switching speed, wide safe operating area, etc.
This document describes the features and applications of ROHM's R5019ANX 10V Nch MOSFET, including low on-resistance, low input capacitance, and high ESD. It also provides the dimensions and absolute maximum ratings of the product, as well as thermal resistance and electrical characteristics.
This document is a datasheet for the ROHM R6006AND Nch MOSFET. The product features low on-resistance, high-speed switching, wide SOA, and is suitable for switching applications.
R6006ANX is a 600V 6A Nch power MOSFET from ROHM. It features a low on-resistance, fast switching speed, simple drive circuits, parallel use and RoHS compliance.
R6008ANX is a high-voltage and high-power MOSFET produced by ROHM. Its maximum working voltage is 600V and its maximum continuous current is 8A. It has the characteristics of low on-resistance, fast switching speed, simple drive circuit, and easy parallel use.
The R6008FNX is a Nch 600V 8A Power MOSFET from ROHM. It features low on-resistance, fast switching speed, simple drive circuits, and is suitable for switching power supply applications.
R6010ANX is a low-voltage drive N-channel MOSFET with the following features: low on-resistance, fast switching speed, gate-source voltage guaranteed to be ±30V, simple drive circuits, and easy parallel use.
This document describes the features and characteristics of the R6012ANJ 10V Drive Nch MOSFET produced by ROHM Co., Ltd., including low on-resistance, fast switching speed, gate-source voltage guaranteed to be ±30V, simple drive circuits, and easy parallel use.
This document describes the features and characteristics of the R6012ANX Nch 600V 12A Power MOSFET from ROHM Co. Ltd., including low on-resistance, fast switching speed, simple drive circuits, and easy parallel use.
This document describes the features and characteristics of the ROHM R6012FNX 10V Drive Nch MOSFET, including fast reverse recovery time, low on-resistance, fast switching speed, etc.
R6015ANJ is a silicon N-channel MOSFET with low on-resistance, fast switching speed, gate-source voltage (VGSS) guaranteed to be ±30V, simple drive circuits, and easy parallel use.
