QS5U26 Transistor Rev.B is a Pch+ SBD MOSFET with features including low on-state resistance, fast switching, low voltage drive, and low forward voltage. It is suitable for switching applications.
QS5U21 is a 2.5V drive Pch+SBD MOS FET. The device has low on-state resistance and fast switching characteristics, built-in schottky barrier diode, low forward voltage, suitable for load switch and DC/DC conversion applications.
QS5U17 is a 2.5V drive Nch+SBD MOS FET with low on-state resistance, fast switching, low voltage drive (2.5V), and is widely used in load switching and DC/DC conversion.
The QS5U16 is a transistor that combines an Nch MOSFET with a Schottky barrier diode. It features low on-state resistance, fast switching, low voltage drive, and low forward voltage. It is suitable for applications such as load switches and DC/DC conversion.
This document is a datasheet for the ROHM QS8M13 4V Drive Nch + Pch MOSFET. The MOSFET features low on-resistance, high power package, and low voltage drive, making it suitable for switching applications.
This document describes the features and characteristics of the 2.5V drive Nch MOSFET QS8K2 produced by ROHM, including low on-resistance, high power package, and 2.5V drive.
QS8K13 is a low-voltage drive Nch + Nch MOSFET produced by ROHM, with low on-resistance, high power package, low voltage drive and other features, suitable for switching applications.
QS8J5 is a Pch + Pch MOSFET produced by ROHM. It has low on-resistance, high power package, low voltage drive, and is suitable for switching applications.
