This document describes the features and characteristics of the Phase Control Thyristors -Phaseleg Topology- in ISOPLUS i4-PACTM 1 5 FCC 21-12io produced by IXYS, including long-term stability, high reliability, low coupling capacity, and enlarged creepage distance. The product is suitable for controlled rectifiers, power supplies, and drives.
The data table lists the parameters of MEA95-06 DA, MEK 95-06 DA, MEE 95-06 DA, including rated current, rated voltage, reverse recovery time, switching losses, soft recovery characteristics, isolation voltage, application scenarios and advantages.
This datasheet provides the technical specifications of IXDP 35N60 B, IXDH 35N60 B and IXDH 35N60 BD1. These IGBTs feature NPT technology, low switching losses, low tail current, no latch up, short circuit capability, positive temperature coefficient for easy paralleling, MOS input, voltage controlled, optional ultra fast diode and international standard package.
This is a datasheet for the IXTH 88N15 high current power MOSFET. It has a maximum voltage of 150V, a maximum current of 88A, and a minimum on-resistance of 22mΩ
IXFK/IXFN series is a N-channel enhancement mode avalanche rated, high dv/dt, low trr power MOSFET from IXYS. This product has international standard packages, UL 94 V-0 flammability classification, SOT-227B miniBLOC aluminum nitride insulation, low RDS(on) HDMOSTM process, Unclamped Inductive Switching (UIS) rated, Fast intrinsic rectifier and other features. It can be applied to DC-DC converters, synchronous rectification, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, temperature and lighting controls.
The 308 VWI 20-06P1 is a Sixpack IGBT module with NPT IGBTs and FRED diodes, and it is suitable for applications such as AC drives and power supplies with power factor correction.
The IXDN402/IXDI402/IXDF402 is a dual 2A CMOS high-speed MOSFET driver. It is built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. The driver features a wide operating range, high peak output current, low propagation delay time, and is suitable for driving MOSFETs and IGBTs, motor controls, line drivers, etc.
MCC 122 is a dual thyristor module with a rated current of 300A, a rated voltage of 800-1800V, a rated off-state current of 128A, and a rated off-state voltage of 800V. It features an international standard package and direct copper foil connection.
This product is a dual bidirectional thyristor with a rated current of 2x300A and a rated voltage of 800-1800V. Product features include international standard packaging, direct copper bonding Al2O3 ceramic base plate, planar passivated chips, 3600V isolation voltage, UL registered, E 72873, keyed gate/cathode twin pins, etc. Product applications include motor control, power converters, heat and temperature control for industrial furnaces and chemical processes, lighting control and contactless switches. Product advantages include space and weight savings, simple installation, improved temperature and power cycling, and reduced protection circuits.
This data sheet provides the maximum ratings of MCC 19-08io1 B and MCC 19-16io8 B, including ITRMS, ITAVM, VRRM, VRSM, VDSM, VDRM, ITRMS, ITAVM, ITSM, TVJ, TVJM, i2dt, (di/dt)cr, (dv/dt)cr, PGM, TVJ, TVJM, Tstg, VISOL, IISOL, Md, Mounting torque, Terminal connection torque and Weight.
