IXYS Manuals

DSA 20 C 100 PN is a high performance Schottky Diode with very low Vf, extremely low switching losses, low Irm values, improved thermal behaviour, high reliability circuit operation, low voltage peaks and low noise switching.

The document describes the symbol definition, ratings, features, and advantages of DSA 30 C 45 HB advanced Schottky diode, as well as its applications. The diode features very low Vf, extremely low switching losses, low Irm values, improved thermal behavior, high reliability circuit operation, low voltage peaks for reduced protection circuits, and low noise switching.

This datasheet introduces the characteristics of the IXFH/IXFT model N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt MOSFET products, including rated voltage, maximum current, and on-resistance.

IXFX PLUS 247TM is a high performance N-channel enhancement mode power MOSFET from IXYS. It features low gate resistance, high dV/dt and low trr, and is suitable for applications such as DC-DC converters, switched-mode and resonant-mode power supplies, DC choppers and pulse power supplies.

DSA 70 C 150 HB is a high performance Schottky diode with very low Vf and extremely low switching losses

PLUS 247TM is a high-frequency switching power MOSFET produced by IXYS company. It has the characteristics of low Qg, low Rg, high dV/dt, low trr and is suitable for DC-DC converters, switch-mode power supplies, choppers and other applications.

This document is about the characteristics of IXFN 170N10, including package, function, application scenarios, advantages, etc.

This product is a N-channel enhancement mode fast recovery diode, which has the characteristics of fast recovery diode, Unclamped Inductive Switching (UIS) rated, international standard.

CS 19-08ho1 and CS 19-12ho1 are 1-2 phase control thyristors produced by IXYS. Their maximum rated voltage is 800-1200V and the maximum rated current is 29A and 19A.

ISOPLUS247TM G D HiPerFETTM Power MOSFETs are IXYS's power MOSFETs with high power dissipation, low drain to tab capacitance, low RDS (on) and fast intrinsic Rectifier. These products are suitable for DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, AC motor control and other fields.

IXFK 140N30P is a N-channel enhancement mode power MOSFET produced by IXYS, with a rated voltage of 300V and a maximum current of 140A. The switching time is 200ns.

This document is the data sheet for IXFH20N80Q, which introduces the features of the product, including maximum voltage, maximum current, and on-resistance.

DSA 20 C 150PN is a high performance Schottky diode with low loss and soft recovery characteristics. It can be used as a rectifier in switch mode power supplies (SMPS) and as a free wheeling diode in low voltage converters.

DSA 90 C 200HB is a high performance Schottky diode with low losses and soft recovery. It features very low VF, extremely low switching losses, low Irm values, improved thermal behavior, high reliability circuit operation, low voltage peaks for reduced protection circuits, low noise switching and low losses.

IXYS Corporation announced the release of new high-current PolarHT and PolarHV Power MOSFETs that bring additional design flexibility to a broad range of higher power conversion applications based on IXYS PolarHT/HV technology. These new Power MOSFETs exemplify IXYS Corporation’s leadership position in the high current, high voltage power conversion market. IXYS provides a wide selection of these new high-current PolarHT/HV Power MOSFETs. Voltages range from 300V to 800V and currents reach as high as 140A. These Power MOSFETs are offered in a number of different packages, including the standard TO-264 and a variety of IXYS ISOPLUSTM packages, which provides integral backside case isolation. These new devices are all HiPerFET™ processed, yielding Power MOSFETs with a fast intrinsic body diode for low Qrr and enhanced dV/dt ruggedness.