Fairchild Manuals

FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET is a high-performance N-channel MOSFET that uses Fairchild Semiconductor's advanced PowerTrench® process to achieve extremely low on-resistance and low gate charge for superior switching performance. Compared to standard SO-8 and TSSOP-8 packages, this device offers a very small footprint and excellent power dissipation performance.

FDC637AN is a N-channel power transistor produced by Fairchild Semiconductor. It has a rated voltage of 2.5V and a maximum current of 6.2A. It uses the PowerTrench process and has low RDS(ON) and low gate charge.

This document describes a P-Channel 2.5V specified MOSFET that uses Fairchild's low voltage PowerTrench process and has been optimized for battery power management applications. The product features include: -3.5A, -20V drain-source current, with RDS(ON) of 80 mΩ @ VGS = -4.5V and 110 mΩ @ VGS = -2.5V; low gate charge (7.2 nC typical); high performance trench technology for extremely low RDS(ON).

FDC6333C 30V N & P-Channel PowerTrench MOSFETs are produced by Fairchild Semiconductor Corporation using their advanced PowerTrench process. These devices feature extremely low RDS(ON) and superior switching performance. The SuperSOT-6 package is small and thin, making it ideal for applications where size and power dissipation are critical.

The FDC6327C is a dual N and P channel 2.5V specified PowerTrench™ MOSFET. It is manufactured using Fairchild Semiconductor's advanced PowerTrench process that has been specially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

FDC6321C dual N & P channel digital FETs have very low gate drive requirements allowing direct operation in 3V circuits.

FDD8447L 40V N-Channel PowerTrench® MOSFET is a 40V, 50A, 8.5mΩ MOSFET with low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.

This document describes the features and characteristics of the FDD8445 N-Channel PowerTrench® MOSFET, including low RDS(ON), low Miller charge, low Qrr body diode, UIS capability, qualified to AEC Q101, and RoHS compliant. The product is suitable for applications such as automotive engine control, powertrain management, solenoid and motor drivers, electronic transmission, distributed power architecture and VRMs, and primary switch for 12V systems.

The FDD8444 is an N-channel power MOSFET manufactured by Fairchild Semiconductor Corporation. It features a typical rDS(on) of 4mΩ, a typical Qg(10) of 89nC, low Miller charging and low Qrr body diode characteristics, and has passed AEC Q101 and RoHS certification. It can be applied to automotive engine control, powertrain management, solenoid and motor drivers, electronic transmissions, distributed power architectures and VRMs, and 12V systems as the main switch.

FDD8424H_F085A is a dual N and P channel enhancement mode Power MOSFET produced by Fairchild Semiconductor. It has a 40V on-state voltage and a 20A maximum current, fast switching speed, and is RoHS compliant.

This document describes the FDD8424H Dual N & P-Channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation. The N-Channel features include a maximum rDS(on) of 24mΩ at VGS = 10V, ID = 9.0A and a maximum rDS(on) of 30mΩ at VGS = 4.5V, ID = 7.0A. The P-Channel features include a maximum rDS(on) of 54mΩ at VGS = -10V, ID = -6.5A and a maximum rDS(on) of 70mΩ at VGS = -4.5V, ID = -5.6A. Additionally, this MOSFET offers fast switching speed and is RoHS compliant.

FDD7N60NZ / FDU7N60NZ N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. It has RDS(on) = 1.05 ( Typ.)@ VGS = 10V, ID = 2.75A, low gate charge ( Typ. 13nC), low Crss ( Typ. 7pF), fast switching, 100% avalanche tested, improved dv/dt capability, improved ESD capability, RoHS compliant and other features.

FDD7N25LZ 250V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. It uses Fairchild's proprietary planar stripe DMOS technology and has low on-state resistance, superior switching performance and fast recovery characteristics.

FDD7N20/FDU7N20 is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse withstand capability, and is well suited for high efficient switched mode power supplies and active power factor correction.

FDD7030BL/FDU7030BL 30V N-Channel PowerTrench MOSFET is an N-Channel MOSFET with low gate charge, low RDS(ON), fast switching speed and extremely low RDS(ON), suitable for DC/DC converters and motor drives.