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FDD6637 is a 35V P-Channel PowerTrench MOSFET produced by Fairchild Semiconductor. Its RDS(ON) is very low, only 11.6 mΩ @ VGS = –10 V. The device is packaged in TO-252 D-PAK.
FDD6635 35V N-Channel PowerTrench® MOSFET is a N-channel MOSFET produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications.
FDD6612A/FDU6612A is a 30V N-Channel PowerTrench MOSFET designed for DC/DC converters and motor drives. Its features are RDS(ON) low, small package, suitable for high current applications.
FDD6630A is a 20V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, with low on-resistance, low switching loss and high switching speed
FDD6296/FDU6296 30V N-Channel Fast Switching PowerTrench MOSFET is a high performance MOSFET from Fairchild Semiconductor Corporation, which features low gate charge, low RDS(ON) and fast switching speed, suitable for DC/DC converter and power management applications.
This document is the technical manual for FDD5N60NZ N-Channel MOSFET. This device is a N-channel enhancement mode power field effect transistor, which is produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide faster switching speed and excellent dv/dt capability.
This document describes the features and characteristics of Fairchild Semiconductor Corporation's FDD5N53/FDU5N53 N-Channel MOSFET products, including low on-state resistance, low gate charge, and fast switching.
FDD5N50U is a N-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. It uses Fairchild's proprietary planar stripe DOMS technology, which has low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and RoHS compliance.
FDD5N50NZF is a N-channel enhancement mode power field effect transistor produced by Fairchild, with low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability, ESD improved capability and RoHS compliance.
The FDD5N50NZ is a N-channel MOSFET with a maximum voltage of 500V and a maximum current of 4A. It has a fast switching speed and has passed a 100% avalanche test.
This document describes the features and characteristics of Fairchild Semiconductor Corporation's FDD5N50 N-Channel MOSFET product, including maximum rated voltage, maximum rated current, low charge, fast switching, etc.
The document describes a N-channel power MOSFET called PowerTrench® MOSFET. The product has a drain-source voltage of 60V, maximum continuous drain current of 30A, and maximum pulsed drain current of 100A. The maximum power dissipation is 50W. The product has good thermal characteristics, with an operating and storage temperature range of -55 to +150 degrees Celsius.
The FDD5680 is an N-channel MOSFET produced by Fairchild Semiconductor. It features low RDS(on), fast switching speed, and is used in DC/DC converters and motor drives.
