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FDG6318P is a dual P-Channel logic level enhancement mode MOSFET produced by Fairchild Semiconductor using the PowerTrench process, with a small resistance, suitable for low voltage applications
FDG6317NZ is a dual N-channel MOSFET with extremely low RDS(ON), and it is suitable for applications such as DC/DC converters, power management and load switches.
This document describes the features and characteristics of the FDG6316P P-Channel 1.8V MOSFET product produced by Fairchild Semiconductor Corporation in 2001. It is suitable for applications such as battery management and load switches.
This document describes the features and characteristics of the FDG6308P P-Channel MOSFET, which is suitable for battery management and load switch applications.
The FDG6301N is a dual N-channel digital field effect transistor with a maximum voltage of 25 V and a maximum current of 0.22 A. It features a low threshold voltage, high density process, and compact package, making it ideal for low voltage applications.
The FDG410NZ is a single N-channel power MOSFET with an extremely low rDS(on) and gate charge (Qg) that is optimized for use in small switching regulators, DC/DC converters, power management and load switches.
FDG330P is a P-Channel 1.8V specified PowerTrench MOSFET produced by Fairchild Semiconductor Corporation. It has low gate charge and extremely low RDS(ON), which is suitable for battery management applications.
The FDG328P is a P-channel MOSFET produced by Fairchild Semiconductor. It features a 2.5V gate drive voltage, a maximum current of 1.5A and a maximum drain-source voltage of -20V. It uses Fairchild Semiconductor's advanced PowerTrench process, which provides low gate charge, high performance trench technology and a compact SC70-6 surface mount package.
The FDG327NZ 20V N-Channel PowerTrench™ MOSFET is a product from Fairchild Semiconductor Corporation. It is mainly used in DC/DC converters, power management and load switches. This product has low RDS(ON), low gate charge, high performance and high power.
FDG327N is a N-Channel MOSFET from Fairchild Corporation. It has a very low RDS(ON) and gate charge, making it ideal for use in small switching power supplies.
The document describes the features and characteristics of the FDG316P P-Channel Logic Level MOSFET product, which is produced using Fairchild Semiconductor's PowerTrench process. It has low on-state resistance and fast switching performance, making it suitable for low voltage and battery-powered applications.
