Fairchild Manuals

This document describes the assembly guidelines for the Fairchild Dual Power33 package, which uses Molded Leadless Packaging (MLP) technology and has low package height and excellent thermal performance.

This application note introduces the MicroFET 1.6x1.6 package technology, including MLP technology, package design, and assembly process

Fairchild’s GreenBridge™ solution reduces power losses in the bridge circuit and leads to an efficient and cost-effective PoE system.

This manual introduces the use of Power56 MOSFET, including mounting techniques and circuit design. The MOSFET has the characteristics of miniaturization, high performance and low power consumption.

This application note focuses on the soldering and back end processing of the Dual Power56

This document introduces an empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses.

This document presents an empirical self-heating SPICE MOSFET model that accurately portrays the vertical DMOS power MOSFET electrical and thermal responses. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model [2,3] is highly accurate and is recognized in the industry. The sequence of the model calibration procedure using parametric data is described. Simulation response of the new self-heating MOSFET model track the dynamic thermal response and is independent of SPICE’s global tem- perature definition.

The Power MOSFET is a very popular switching device used in switching power supplies and DC-DC converters. Their operation frequency is being continuously increased to reduce size and increase power density. This causes high di/dt, intensifies the negative effect from parasitic inductances, and results in high voltage spike between the Power MOSFET drain and source during device turn off. The spike is worst at power on due to empty bulk capacitors and small inductance because the transformer primary side inductance almost reaches the level of leakage inductance. Fortunately, the Power MOSFET is equipped to withstand a certain level of stress, unnecessitating expensive protection circuits. This note presents an effective way to determine the applicability of a Power MOSFET in an application. The designers can balance between cost and reliability.

This application note provides information on how to select FETs for primary side switches in 48V power converters. Basic topologies of different 48V power converters are introduced and detailed guidelines for selecting FETs are provided.

This document provides an overview of how to design printed circuit boards (PCBs) for embedded switching power supplies. It covers the key rules and considerations to keep in mind when designing a PCB, as well as how to avoid some common mistakes.

This document introduces how to maximize the power handling capability of SOT-223 Power MOSFETs. This document provides the optimum design method of copper mounting pads to improve component performance and circuit board packing density.

This document describes the features and advantages of Wafer level chip scale packaging (WLCSP) technology, as well as manufacturing process optimization recommendations for Fairchild Semiconductor WLCSP components.

This paper discusses how to improve the power performance of the SuperSOTTM-6 Power MOSFET by optimizing the design of copper mounting pads. By using the thermal solution suggested in the document, users can take full advantage of the exceptional performance features of Fairchild Semiconductor's latest Power MOSFET, including very low on-resistance and improved junction-to-case thermal resistance (RθJC). This ultimately leads to improved component performance and higher circuit board packing density.

This design guide describes the design of asymmetric PWM half-bridge converters using Fairchild FSFA-series power switches (FPSTM) with a current doubler and synchronous rectifier.

This document introduces practical aspects of using PowerMOS transistors to drive inductive loads, including application scenarios, circuit principles, and characteristic analysis.