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This document describes the features and characteristics of the FDD6N50F / FDU6N50F N-Channel MOSFET products produced by Fairchild Semiconductor Corporation, including low on-state resistance, low gate charge, fast switching speed, and high voltage withstand capability.
FDD6N50/FDU6N50 500V N-Channel MOSFET is a high performance MOSFET produced by Fairchild. It features low on-state resistance, low gate charge, low Crss, fast switching and 100% avalanche tested.
This document describes the features and characteristics of the FDD6N25 / FDU6N25 250V N-Channel MOSFET, including current, voltage, switching speed, and other parameters.
FDD6796A / FDU6796A_F071 is an N-Channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation. Its max rDS(on) is 5.7 mΩ and max ID is 20 A. It has been tested by 100% UIL and is RoHS compliant.
The FDD6780A / FDU6780A_F071 N-Channel PowerTrench® MOSFET is a 25 V, 8.6 mΩ MOSFET designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
FDD6778A N-Channel PowerTrench® MOSFET is an N-Channel MOSFET with the features of low gate charge, low RDS(on) and fast switching speed. It can be used to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
The FDD6770A N-Channel PowerTrench® MOSFET is a MOSFET device produced by Fairchild Semiconductor Corporation. It has a maximum rDS(on) of 4.0 mΩ, a maximum gate charge of 24 A, and is packaged in a TO-252 package. It is used in Vcore DC-DC for desktop computers and servers and VRM for Intermediate Bus Architecture.
FDD6760A is a N-channel PowerTrench® MOSFET manufactured by Fairchild Semiconductor Corporation. It features low gate charge, low rDS(on) and fast switching speed. It is suitable for Vcore DC-DC converters for desktop computers and servers and VRM for Intermediate Bus Architecture.
This document describes the features and characteristics of the FDD6690A 30V N-Channel PowerTrench MOSFET produced by Fairchild Semiconductor. It utilizes the advanced PowerTrench process to minimize on-state resistance and maintain low gate charge for superior switching performance.
This document introduces the FDD6688/FDU6688 N-Channel PowerTrench MOSFET from Fairchild Semiconductor Corporation. It is specifically designed to improve the efficiency of DC/DC converters, whether using synchronous or conventional switching PWM controllers. It features low gate charge, low RDS(ON), and fast switching speed.
FDD6685 30V P-Channel PowerTrench MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
FDD6682/FDU6682 30V N-Channel PowerTrench MOSFET is designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
The FDD6680AS is a 30V N-Channel PowerTrench® SyncFET™ designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. It offers low RDS(ON) and low gate charge to maximize power conversion efficiency. The FDD6680AS features Fairchild's monolithic SyncFET technology, which includes an integrated Schottky diode. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.
FDD6670A 30V N-Channel PowerTrench MOSFET is a N-Channel MOSFET launched by Fairchild Semiconductor Corp. This device has low gate charge, low RDS(ON), fast switching speed and extremely low RDS(ON) characteristics, suitable for DC/DC converters and motor drives.
