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BC556/557/558/559/560 are PNP type transistors produced by FAIRCHILD. Its maximum collector-emitter reverse voltage is -65V, maximum collector-base reverse voltage is -80V, maximum emitter-base reverse voltage is -5V, maximum collector current is -100mA, and maximum power consumption is 500mW. The maximum working temperature is 150℃.
BC636 is a PNP type silicon transistor produced by Fairchild Semiconductor Corporation. It is mainly used in switch power supply and amplifier circuits.
This document describes the absolute maximum ratings and electrical characteristics of the BC63916 NPN epitaxial silicon transistor. The transistor has high voltage and current capabilities, making it suitable for switching and amplification applications.
BC640 is a PNP epitaxial silicon transistor for switching and amplifier applications, complementary to BC639. It features high voltage and current capacity, low saturation voltage drop, and high frequency characteristics.
This is a PDF file about BC807/BC808, introducing its electrical characteristics, absolute maximum ratings, application scenarios and other information.
BC817/BC818 NPN Epitaxial Silicon Transistor is a device suitable for AF-Driver stages and low power output stages for switching and amplifier applications.
BC846 - BC850 are NPN epitaxial silicon transistors suitable for switching and amplifier applications. They are suitable for automatic insertion in thick- and thin-film circuits. BC849 and BC850 are low noise. They complement the BC856 and BC860.
BC847BS is a NPN Multi-chip General Purpose Amplifier produced by Fairchild Semiconductor Corporation. It can be applied to general purpose amplifier applications at collector currents up to 200 mA
This document describes an NPN multi-chip general purpose amplifier device, designed for general purpose amplifier applications with a maximum collector current of 200mA. The device features a wide operating temperature range of -55°C to +150°C, and has high collector-emitter voltage and collector-base voltage.
This document describes the features and characteristics of the BC856-BC860 PNP Epitaxial Silicon Transistor produced by Fairchild Semiconductor Corporation. It is suitable for switching and amplifier applications, can be automatically inserted in thick and thin-film circuits, and has low noise. It is complementary to BC846.
BC857S is a PNP multi-chip general purpose amplifier produced by FAIRCHILD SEMICONDUCTOR CORPORATION. Its maximum collector current is 200mA and its rated values are VCEO 45V, VCES 50V, VCBO 50V, VEBO 5.0V, and TJ 150°C
BCP51 is an NPN transistor with a maximum collector voltage of -45V, a maximum collector-emitter voltage of -45V, a maximum collector-base voltage of -45V, a maximum emitter-base voltage of -5V and a maximum collector current of -1.5A. Its operating temperature range is -55~150 degrees
This document describes the absolute maximum ratings and thermal characteristics of the BCP52 PNP general purpose amplifier. The device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents up to 1.0A.
The BCP53 is a PNP general purpose amplifier manufactured by Fairchild Semiconductor Corporation. This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A.
