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The FDD5670 is an N-Channel MOSFET manufactured by Fairchild Semiconductor Corporation. It features low gate charge, low RDS(ON) and fast switching speed. Its rated voltage is 60V and rated current is 52A.
FDD5614P 60V P-Channel PowerTrench® MOSFET is a high performance power switch device from Fairchild company. It is suitable for power management, DC/DC converter, load switch and other applications.
FDD5612 is a N-Channel PowerTrench MOSFET from Fairchild Semiconductor. It has a rated power of 18 A, 60 V, RDS(ON) of 55 mΩ@VGS = 10 V, and 64 mΩ@VGS = 6 V. This MOSFET is optimized for use in high frequency DC/DC converters. It has low gate charge and very fast switching speed.
FDD5353 N-Channel Power Trench® MOSFET 60V, 50A, 12.3mΩ is a high performance MOSFET product produced by Fairchild Semiconductor Corporation. It has excellent switching performance and low on-state resistance.
This document describes the features and characteristics of the FDD3N50NZ N-Channel MOSFET produced by Fairchild Semiconductor Corporation, such as low on-state resistance, low charge, fast switching, 100% avalanche tested, etc.
FDD3N40 / FDU3N40 400V N-Channel MOSFET is a Fairchild N-channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, fast switching, 100% avalanche tested and improved dv/dt capability.
FDG6335N is a 20V N-Channel PowerTrench MOSFET with an extremely low RDS(ON) and low QG, making it ideal for use in DC/DC converters, power management, and load switches.
The FDG6332C is a 20V N & P-Channel PowerTrench MOSFETs produced by Fairchild Semiconductor Corporation, which has low gate charge and extremely low RDS(ON), suitable for DC/DC converter, load switch and other applications.
FDG6322C is a dual N and P channel logic level enhancement mode field effect transistor produced by Fairchild. It has a very small package outline and low voltage drive requirements, allowing direct operation in 3V circuits. This device has been designed for use in place of bipolar digital transistors and small signal MOSFETs, and does not require bias resistors.
FDG6321C is a logic level enhancement mode field effect transistor manufactured by Fairchild using Fairchild's proprietary high cell density DMOS technology. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
This is the datasheet of FDG6320C, it is a dual N-type and P-type channel digital FET. It has a very small package outline SC70-6, very low gate drive requirements, allowing direct operation in 3V circuits (VGS(th) < 1.5 V), Gate-Source Zener for ESD ruggedness (> 6kV Human Body Model).
This is a document about FDG6318PZ dual P-channel digital enhancement mode MOSFET. The product features low on-state resistance and low gate drive requirements, suitable for battery management and other applications.
