This FDMS8020 N-Channel PowerTrench® MOSFET datasheet introduces the features and characteristics of the product, including maximum RDS(on), package, and application scenarios
The document describes the Fairchild Semiconductor FDMS8020, an N-Channel PowerTrench MOSFET designed to improve efficiency and minimize switch node ringing in DC/DC converters. Key features include a maximum on-resistance of 2.5 mΩ at Vgs = 10V and Ip = 26A, along with next-generation enhanced body diode technology engineered for soft recovery.
| Drain to Source Voltage (Vds) | 30 V |
|---|---|
| Continuous Drain Current (Package limited) | 42 A |
| Continuous Drain Current (Silicon limited) | 131 A |
| Power Dissipation (Tc = 25 °C) | 65 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 1.9 °C/W |