FDMS8025S N-Channel PowerTrench® SyncFET™ is a high performance power device with advanced package and silicon combination for low rDS(on) and high efficiency.
The document describes the FDMS8025S as an N-Channel PowerTrench SyncFET designed to minimize losses in power conversion applications. It features a monolithic Schottky body diode and is suitable for synchronous rectification in DC/DC converters, notebook Vcore/GPU low side switches, and telecom secondary side rectification.
Key electrical characteristics include a maximum drain-to-source voltage of 30 V and a continuous drain current of up to 49 A (package limited). The device offers a static drain-to-source on-resistance (Rds(on)) as low as 2.8 mΩ at Vgs = 10 V and Id = 24 A.
| Drain to Source Voltage (Vdss) | 30 V |
|---|---|
| Continuous Drain Current (Package Limited) | 49 A |
| Static Drain to Source On Resistance (Typical) | 2.8 mΩ |
| Power Dissipation (Ta = 25°C) | 2.5 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 49 A when the temperature is 25°C.
The maximum power dissipation is 50 W at a temperature of 25°C.
The device operates and stores within a junction temperature range of -55 to +150 °C.