The FDMS7672 is an N-Channel PowerTrench MOSFET designed to improve the efficiency and minimize switch node ringing of DC/DC converters. It features a low rDS(on) and high efficiency design with an advanced package and silicon design. The MOSFET is optimized for low gate charge, low rDS(on), fast switching speed, and body diode reverse recovery performance.
The FDMS7672 is an N-Channel PowerTrench MOSFET designed to improve efficiency and minimize switch node ringing in DC/DC converters, such as those used in notebook and desktop Vcore switching. It features advanced package and silicon design for low on-resistance and high-speed switching, along with next-generation enhanced body diode technology for soft recovery performance.
| Drain to Source Voltage | 30 V |
|---|---|
| Power Dissipation | 48 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 2.6 °C/W |
| Total Gate Charge (Vgs=9V to 10V) | 31 nC |
| Reverse Recovery Time | 26 ns |
It is designed for IMVP Vcore Switching for Notebook, VAM Vcore Switching for Desktop and Server, OringFET / Load Switch, and DC-DC Conversion.
Yes, the device is RoHS Compliant.
The maximum single pulse avalanche energy is 72 mJ.