The FDMS7678 N-Channel Power Trench® MOSFET is a low-power, high-performance MOSFET product that is suitable for power management and load switching applications in notebook computers and portable battery packs.
The document describes the Fairchild Semiconductor FDMS7678, an N-Channel Power Trench MOSFET produced using advanced technology to minimize on-state resistance. It is lead-free and RoHS compliant, making it suitable for applications in notebook computers and portable battery packs.
Key specifications include a maximum drain-to-source voltage of 30V and a continuous drain current of up to 26A (package limited). The device features low on-resistance values of 5.5 mΩ at Vgs = 10V and 8.8 mΩ at Vgs = 4.5V, optimized for DC-DC buck converters and load switch applications.
| Drain to Source Voltage (Vdss) | 30 V |
|---|---|
| Continuous Drain Current (Package limited) | 26 A |
| On-Resistance at Vgs=10V, Id=17.5A | 5.5 mΩ |
| On-Resistance at Vgs=4.5V, Id=15A | 8.8 mΩ |
| Power Dissipation (Tc=25°C) | 41 W |
Yes, the device is RoHS Compliant and uses Lead-free termination.