This document describes the features and characteristics of the FDMS7682 N-Channel PowerTrench® MOSFET, including maximum on-resistance, advanced package and silicon combination, next generation enhanced body diode technology, 100% UIL testing, and RoHS compliance.
The FDMS7682 is an N-Channel PowerTrench MOSFET designed to improve efficiency and minimize switch node ringing in DC/DC converters. It features advanced package and silicon combinations for low on-resistance and high efficiency, along with next-generation enhanced body diode technology engineered for soft recovery.
| Drain to Source Voltage | 30 V |
|---|---|
| Drain Current - Continuous (Package limited) | 22 A |
| Drain Current - Continuous (Silicon limited) | 59 A |
| Power Dissipation | 33 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Static Drain to Source On Resistance | 6.3 mΩ |
| Total Gate Charge | 30 nC |
It is designed for IMVP Vcore switching, VAM Vcore switching, OringFET/Load switching, and DC-DC conversion.
Yes, the device is RoHS Compliant.
The maximum single pulse avalanche energy is 29 mJ.