FEATURES 20V, 5.2A , RDS(ON) = 26mW @VGS = 4.5V. RDS(ON) = 35mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package.
This document is a datasheet for the CET H2288, an N-Channel Enhancement Mode Field Effect Transistor. It highlights features such as a high dense cell design for extremely low on-resistance, rugged reliability, and a lead-free product construction. The device is housed in a TSOP-6 package.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | +12 V |
| Drain Current-Continuous | 5.2 A |
| Maximum Power Dissipation | 1.14 W |
| Operating and Store Temperature Range | -55 to 150 °C |
| Thermal Resistance, Junction-to-Ambient | 110 °C/W |
| Package Type | TSOP-6 |
The on-resistance is 26mΩ at VGS = 4.5V.
The on-resistance is 35mΩ at VGS = 2.5V.
Yes, the lead-free product is acquired.