FEATURES 30V, 5A, RDS(ON) = 32mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package.
The document is a preliminary datasheet for the CET CEA3252, an N-Channel Enhancement Mode Field Effect Transistor. Key features include a high dense cell design for low on-resistance and a rugged, reliable construction suitable for various applications.
Technical specifications detail absolute maximum ratings such as a drain-source voltage of 30V and continuous drain current of 5A. The datasheet also lists electrical characteristics including off-state breakdown voltage, gate threshold voltage, and dynamic parameters like input capacitance and switching times.
| Drain-Source Voltage (Vos) | 30 V |
|---|---|
| Gate-Source Voltage (Vas) | +20 V |
| Drain Current-Continuous (Ib) | 5 A |
| Maximum Power Dissipation (Pp) | 1.25 W |
| Operating Temperature Range (Tu, Tstg) | -55 to 150 °C |
| Thermal Resistance, Junction-to-Ambient (Raa) | 100 °CW |
The device uses an SOT-89 package.
Yes, it is a lead-free product.