FEATURES -30V, -4.9A , RDS(ON) = 52mW @VGS = -10V. RDS(ON) = 65mW @VGS = -4.5V. RDS(ON) = 119mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead free product is acquired.
This document is a preliminary datasheet for the CET CEH2305, a P-Channel Enhancement Mode Field Effect Transistor. The device features a high dense cell design intended to achieve extremely low on-resistance (RDS(ON)) values of 52mW at VGS = -10V and 65mW at VGS = -4.5V.
| Package Type | TSOP-6 |
|---|---|
| RDS(ON) @ VGS = -10V | 52 mW |
| Operating Temperature Range | -55 to 150 C |
Yes, the product is described as a lead free product.