FEATURES 30V, 6.2A , RDS(ON) = 33mW @VGS = 10V. RDS(ON) = 38mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead-free plating; RoHS compliant.
This document is a technical datasheet for the CET CEH2310, an N-channel enhancement mode field effect transistor (MOSFET). The device features a high dense cell design and is available in a lead-free TSOP-6 package. It is rated for 30V drain-source voltage and 6.2A continuous drain current.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | +12 v |
| Drain Current-Continuous | 6.2 A |
| Maximum Power Dissipation | 2.0 W |
| Operating Temperature Range | -55 to 150 °c |
| Package Type | TSOP-6 package |
The device supports a continuous drain current of 6.2 A.
The transistor operates and stores between -55 °C and 150 °C.
The maximum power dissipation is limited to 2.0 W.