FEATURES 20V, 6.5A, RDS(ON) = 23mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
This document is a datasheet for the CET CEC8218, a dual N-channel enhancement mode field effect transistor. It highlights features such as a 20V drain-source voltage rating, 6.5A continuous drain current, and a super high dense cell design for low on-resistance. The product is lead-free and designed for high power and current handling capabilities.
The datasheet provides comprehensive technical data including absolute maximum ratings, electrical characteristics, and dynamic parameters. It includes graphs illustrating output characteristics, on-resistance variation with temperature, transfer characteristics, and switching waveforms to assist in circuit design and application.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | +12 V |
| Drain Current-Continuous | 6.5 A |
| Drain Current-Pulsed | 25 A |
| Maximum Power Dissipation | 15 W |
| Operating and Store Temperature Range | -55 to 150 °C |
| Thermal Resistance, Junction-to-Ambient | 83 °C/W |
| Static Drain-Source On-Resistance (VGS=4.5V) | 23 mΩ |
| On-Resistance (VGS=2.5V) | 34 mΩ |
The continuous drain current is 6.5 A.
The maximum power dissipation is 15 W.
Yes, the product is lead-free.