FEATURES 20V, 6.2A, RDS(ON) = 22mW @VGS = 4.5V. RDS(ON) = 32mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. ESD Protected: HBM 2000 V
This document is a datasheet for the CET CEG8208, a dual N-channel enhancement mode field effect transistor. It features a super high dense cell design with lead-free construction and is available in a TSSOP-8 surface mount package. The device is ESD protected with an HBM rating of 2000V.
| Drain-Source Voltage | 20 V |
|---|---|
| Drain Current-Continuous | 6.5 A |
| Maximum Power Dissipation | 15 W |
| Operating Temperature Range | -55 to 150 °C |
| Package Type | TSSOP-8 |
| ESD Protection (HBM) | 2000 V |
The maximum continuous drain current is 6.5 A.
The typical on-resistance is 22 mΩ at VGS = 4.5V.
Yes, the product is lead-free.