FEATURES 60V, 1.8A, RDS(ON) = 250mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.
This document is a technical datasheet for the CET CEA6861, a P-Channel Enhancement Mode Field Effect Transistor. The device features a high dense cell design intended for extremely low RDS(ON) and comes in an SOT-89 package. It is described as rugged and reliable with lead-free product acquisition.
| Drain-Source Voltage (VDS) | -60 V |
|---|---|
| Gate-Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) | -2.4 A |
| Maximum Power Dissipation (PD) | 1.25 W |
| Operating Temperature Range | -55 to 150 °C |
| Thermal Resistance (RθJA) | 100 °C/W |
The absolute maximum power dissipation is 1.25 W.
The component operates and stores between -55°C and 150°C.