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- Manuals
- 12
- Categories
- 1
- Last added
- 2014-03-05
Latest CET manuals
CET H2288 Transistor
FEATURES 20V, 5.2A , RDS(ON) = 26mW @VGS = 4.5V. RDS(ON) = 35mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package.
CET CEG2288 Transistor
FEATURES 20V, 6.2A, RDS(ON) = 24mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 Package.
CET CEH2310 Transistor
FEATURES 30V, 6.2A , RDS(ON) = 33mW @VGS = 10V. RDS(ON) = 38mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead-free plating; RoHS compliant.
CET CEH2305 Transistor
FEATURES -30V, -4.9A , RDS(ON) = 52mW @VGS = -10V. RDS(ON) = 65mW @VGS = -4.5V. RDS(ON) = 119mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead free product is acquired.
CET CEG8208 Transistor
FEATURES 20V, 6.2A, RDS(ON) = 22mW @VGS = 4.5V. RDS(ON) = 32mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. ESD Protected: HBM 2000 V
CET CEG8205A Transistor
FEATURES 20V, 6.2A, RDS(ON) = 24mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 Package.
CET CEC8218 Transistor
FEATURES 20V, 6.5A, RDS(ON) = 23mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
CET CEA6200 Transistor
FEATURES 60V, 1.8A, RDS(ON) = 250mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.
CET CEA6861 Transistor
FEATURES 60V, 1.8A, RDS(ON) = 250mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.
CET CEA3252 Transistor
FEATURES 30V, 5A, RDS(ON) = 32mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package.
CET CEA6426 Transistor
FEATURES 60V, 1.8A, RDS(ON) = 250mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.
CET CEDF634/CEUF634 N-Channel Enhancement Mode Field Effect Transistor
This document describes the features and characteristics of the N-Channel Enhancement Mode Field Effect Transistor CEDF634/CEUF634, including maximum operating voltage, maximum operating current, and on-resistance. The product features a super high dense cell design for extremely low on-resistance and high power and current handling capability.