FEATURES 60V, 1.8A, RDS(ON) = 250mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.
This document is a preliminary datasheet for the CET CEA6200, an N-Channel Enhancement Mode Field Effect Transistor. It highlights key features such as a 60V drain-source voltage rating, 1.8A continuous drain current, and a low on-resistance of 250mΩ at VGS = 10V. The device is available in a SOT-89 package and is designed for high density and rugged reliability.
| Drain-Source Voltage | 60 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Drain Current-Continuous | 1.8 A |
| Drain Current-Pulsed | 7.2 A |
| Maximum Power Dissipation | 1.3 W |
| Operating and Store Temperature Range | -55 to 150 °C |
| Thermal Resistance, Junction-to-Ambient | 100 °C/W |
| Static Drain-Source On-Resistance (VGS=10V) | 250 mΩ |
| Package Type | SOT-89 |
The continuous drain current is 1.8 A.
The maximum drain-source voltage is 60 V.
The on-resistance is 250 mΩ when VGS is 10V and ID is 1.8A.