FEATURES 20V, 6.2A, RDS(ON) = 24mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 Package.
This document is a technical datasheet for the CET CEG8205A, which is a Dual N-Channel Enhancement Mode Field Effect Transistor. The device features a Super High dense cell design and is available in a TSSOP-8 Surface Mount Package.
Key specifications include a Drain-Source Voltage of 20V, a continuous Drain Current of 6A, and an On-Resistance (RDS(ON)) of 34mΩ at VGS = 2.5V. The transistor is designed for high power and current handling capability.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | +12 v |
| Drain Current-Continuous | 6 A |
| Maximum Power Dissipation | 15 W |
| Operating and Store Temperature Range | -55 to 150 °c |
| Thermal Resistance, Junction-to-Ambient | 83 "CAN |
The device supports a continuous drain current of up to 6 A.
The absolute maximum power dissipation is 15 W when the temperature is 25°C.
This transistor uses a TSSOP-8 surface mount package.