FEATURES 20V, 6.2A, RDS(ON) = 24mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 Package.
This document is a datasheet for the CET CEG2288, a dual N-channel enhancement mode field effect transistor. It is housed in a TSSOP-8 package and is designed with a super high dense cell structure to achieve extremely low on-resistance (RDS(ON)).
The device supports a drain-source voltage of 20V and a continuous drain current of 6.2A. Key electrical characteristics include a maximum power dissipation of 1.25W and an operating temperature range from -55°C to 150°C. The datasheet provides detailed absolute maximum ratings, electrical characteristics, and switching parameters.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | +12 V |
| Drain Current-Continuous | 6.2 A |
| Drain Current-Pulsed | 25 A |
| Maximum Power Dissipation | 1.25 W |
| Operating Temperature Range | -55 to 150 °C |
| Thermal Resistance, Junction-to-Ambient | 100 °C/W |
| Package Type | TSSOP-8 |
The maximum continuous drain current is 6.2 A.
The maximum power dissipation is 1.25 W.
The operating and storage temperature range is -55 to 150 °C.