FEATURES 60V, 1.8A, RDS(ON) = 250mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.
The document describes the CET CEA6426, an N-channel enhancement mode field effect transistor (MOSFET) designed with a high dense cell structure. It features a rugged and reliable design suitable for various electronic circuits, housed in an SOT-89 package.
Key specifications include a drain-source voltage rating of 60V and a continuous drain current capability of up to 4.6A. The on-resistance (RDS(ON)) is specified at 90mW with VGS = 10V and 110mW with VGS = 4.5V, depending on the operating conditions.
| Operating Temperature Range (TJ, Tstg) | -55 to 150 C |
|---|---|
| Package Type | SOT-89 |
The on-resistance is 90mW when the gate-source voltage is 10V.
The on-resistance is 110mW when the gate-source voltage is 4.5V.
Yes, it is a lead-free product.