NXP BT236X-800 4Q Triac Datasheet

Planar passivated four quadrant triac in a SOT186A "full pack" plastic package intended for use in general purpose bidirectional switching and phase control applications.


NXP BT236X-800 4Q Triac Datasheet - cover page
Brand
NXP
Category
4Q Triac
Document type
Datasheet
Language
English
Pages
14
File format
PDF
File size
226 KB
Published
22 May, 2014
Updated
25 September, 2023
MD5 checksum
E4251D9AB4379E02B97C2C29CF47DDF0

About this manual

The document describes the NXP BT236X-800, a planar passivated four quadrant triac housed in an isolated TO-220F (SOT186A) plastic package. It is designed for general-purpose bidirectional switching and phase control applications.

What's inside

  • General description
  • Features and benefits
  • Applications
  • Pinning information
  • Ordering information
  • Limiting values
  • Thermal characteristics
  • Isolation characteristics
  • Static characteristics
  • Dynamic characteristics

Specifications

Repetitive peak off-state voltage (VDRM)800 V
Non-repetitive peak on-state current (ITSM)65 A
RMS on-state current (IT(RMS))6 A
Gate trigger current (IGT)30 mA to 70 mA
RMS isolation voltage (Visol)2500 V

Frequently asked questions

What is the maximum RMS on-state current for this triac?

The maximum RMS on-state current is 6 A.

What is the maximum non-repetitive peak on-state current?

The maximum non-repetitive peak on-state current is 65 A.

What is the maximum storage temperature for this device?

The maximum storage temperature is 150 °C.

What is the maximum RMS isolation voltage from the terminals to the heatsink?

The maximum RMS isolation voltage is 2500 V.

Download PDF (226 KB)

More NXP Manuals


View all NXP manuals →