NXP BUK9875-100A FET Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.


NXP BUK9875-100A FET Datasheet - cover page
Brand
NXP
Category
FET
Document type
Datasheet
Language
English
Pages
13
File format
PDF
File size
291 KB
Published
23 May, 2014
Updated
25 September, 2023
MD5 checksum
C11C450D96C67C0142076EAB591E5492

About this manual

The NXP BUK9875-100A is a logic level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology in a plastic SC-73 (SOT223) package. It is designed and qualified to appropriate AEC standards for use in automotive critical applications, featuring low conduction losses due to low on-state resistance and compliance with Q101 standards. The device is suitable for logic level gate drive sources and supports 12V, 24V, and 42V loads.

What's inside

  • General description
  • Features and benefits
  • Applications
  • Quick reference data
  • Pinning information
  • Ordering information
  • Limiting values
  • Thermal characteristics
  • Characteristics
  • Legal information

Specifications

Junction temperature-55 to 150 °C

Frequently asked questions

What is the primary application of the BUK9875-100A?

It is designed and qualified for use in automotive critical applications.

Is the BUK9875-100A compliant with Q101?

Yes, the product is Q101 compliant.

What voltage loads is the FET suitable for?

It is suitable for 12V, 24V, and 42V loads.

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