Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
The NXP BUK9K17-60E is a dual N-channel 60 V, 17 mΩ logic level MOSFET housed in an LFPAKS6D (Dual Power-SO8) package. It utilizes TrenchMOS technology and is qualified to the AEC Q101 standard for use in high-performance automotive applications, including 12 V automotive systems for motors, lamps, and solenoid control.
The device features a true logic level gate with a Vgs(th) rating greater than 0.5 V at 175 °C, making it suitable for thermally demanding environments. Key specifications include a maximum drain-source voltage of 60 V, a total power dissipation of 53 W, and a junction temperature rating of 175 °C.
Yes, the product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Yes, it is a dual logic level N-channel MOSFET with a Vgs(th) rating greater than 0.5 V at 175 °C.