Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
The document describes the NXP BUK7K52-60E, which is a Dual N-channel 60 V, 45 mΩ standard level MOSFET. It utilizes TrenchMOS technology and is packaged in an LFPAKS6D (Dual Power-SO8) form factor.
The product has been designed and qualified to the AEC Q101 standard for use in high performance automotive applications. Key features include suitability for thermally demanding environments with a 175 °C rating, true standard level gate operation, and compliance with 12 V Automotive systems requirements.
| Package type | LFPAKS6D (Dual Power-SO8) |
|---|
The device has a maximum junction temperature of 175 °C.
The maximum drain-source voltage is 60 V.