Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
The NXP BUK7K18-40E is a dual N-channel MOSFET featuring TrenchMOS technology and packaged in an LFPAKS6D (Dual Power-SO8) format. It is designed and qualified to the AEC Q101 standard for use in high-performance automotive applications, including motor, lamp, and solenoid control.
Key features include a drain-source voltage rating of 40 V, a typical on-state resistance of 19 mΩ, and a junction temperature rating of 175 °C. The device is suitable for 12 V automotive systems and offers repetitive avalanche ruggedness.
Yes, it is designed and qualified to the AEC Q101 standard for high-performance automotive applications.