Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
The document describes the NXP BUK7526-100B, an N-channel TrenchMOS FET designed and qualified to AEC standards for automotive critical applications. Key features include low conduction losses due to low on-state resistance, suitability for standard level gate drive sources, and a high junction temperature rating of 175 °C.
| Package type | TO-220AB plastic single-ended package |
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The device has a high thermal rating suitable for demanding environments, with a maximum junction temperature of 175 °C.
Yes, the product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
It is suitable for 12 V, 24 V and 42 V loads, including automotive systems, general purpose power switching, motors, lamps and solenoids.