Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
The NXP BUK9K134-100E is a dual N-channel MOSFET featuring TrenchMOS technology, housed in an LFPAK56D (Dual Power-SO8) package. It is designed and qualified to the AEC Q101 standard for use in high-performance automotive systems, including 12 V, 24 V, and 48 V applications for motors, lamps, and solenoid control.
Key features include a drain-source voltage rating of 100 V, a total power dissipation of 32 W, and a junction temperature rating of 175 °C. The device offers true logic level gate operation with a threshold voltage greater than 0.5 V at 175 °C and is repetitive avalanche rated.
| Package type | LFPAK56D |
|---|
It is designed and qualified for use in high performance automotive applications.
Yes, it features a true logic level gate with a threshold voltage rating of greater than 0.5 V at 175 °C.
Yes, the product is repetitive avalanche rated.